PART |
Description |
Maker |
TA20401201DH TA20401203DH POWEREXINC-C430F TC20172 |
1884 A, SCR 4396 A, SCR 2198 A, SCR 471 A, SCR 549.5 A, SCR 78.5 A, 200 V, SCR 1570 A, SCR 196.25 A, SCR 1256 A, SCR 863.5 A, SCR 235.5 A, SCR 392.5 A, SCR 1413 A, SCR 125.6 A, 500 V, SCR 1177.5 A, SCR
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POWEREX INC
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MAC97-4 MAC97-6 MAC97-8 |
TRIACs 0.8 AMPERE RMS 200 - 600 VOLTS
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Motorola, Inc
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2N1805 2N1910 2N1911 2N1912 2N1913 2N1914 2N1915 2 |
Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts 110 A, 200 V, SCR Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts 110 A, 100 V, SCR Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts 110 A, 250 V, SCR
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Powerex, Inc. POWEREX[Powerex Power Semiconductors]
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CS65-70M CS65-70B CS65-70D CS65-70N CS65-70P CS65- |
Leaded Thyristor SCR SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS
|
Central Semiconductor Corp
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STK14C68-C25 STK14C68-5S30 STK14C68-5S25 STK14C68- |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA NVRAM (EEPROM Based) SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:200uA RoHS Compliant: Yes SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA RoHS Compliant: Yes SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA RoHS Compliant: Yes SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):70A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50mA NVRAM中(EEPROM的基础
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Electronic Theatre Controls, Inc.
|
R216CH12 R325CH02 R800CH04 |
1125 A, 1200 V, SCR 2398 A, 200 V, SCR 5260 A, 400 V, SCR
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Westcode Semiconductors, Ltd. WESTCODE SEMICONDUCTORS LTD
|
IRKHF112-02CPN IRKLF180-08HPNPBF IRKLF180-08HJNPBF |
175.84 A, 200 V, SCR 282.6 A, 800 V, SCR 314 A, 800 V, SCR 314 A, 200 V, SCR
|
Amphenol, Corp.
|
2P1M-YB 2P6M-YB 2P4M-YB 2P2MYC 2P2M-YB 2P2M-CY 2P0 |
4 A, 100 V, SCR PLASTIC PACKAGE-3 4 A, 600 V, SCR PLASTIC PACKAGE-3 4 A, 400 V, SCR PLASTIC PACKAGE-3 4 A, 200 V, SCR 4 A, 50 V, SCR
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FS1209BH00TU FS1209DH00TU FS1209MH00TU FS1209NH00T |
12 A, 200 V, SCR, TO-220AB 12 A, 400 V, SCR, TO-220AB 12 A, 600 V, SCR, TO-220AB 12 A, 800 V, SCR, TO-220AB
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CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92 0.47 A, 300 V, SCR, TO-92 LOW POWER USE PLANAR PASSIVATION TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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